k6t4008v1c, k6t4008u1c family cmos sram revision 2.01 october 2001 1 document title 512kx8 bit low power and low voltage cmos static ram revision history revision no. 0.0 0.1 0.11 1.0 2.0 2.01 remark advance preliminary final final final history initial draft revisied - speed bin change km68u4000c: 85/100ns ? 70/85/100ns - dc characteristics change i cc : 5ma at read/write ? 4ma at read i cc1 : 3ma ? 4ma i cc2 : 35ma ? 30ma i sb : 0.5ma ? 0.3ma i sb1 : 10 m a ? 15 m a for commercial parts - add 32-tsop1-0820 errata correct - 32-tsop1-0813 products: t ? tg finalize revised - delete 32-tsop1-0820 from product list revised - improved voh(output high voltage) from 2.2v to 2.4v. - errata correction for 32-tsop1-0813.4 size form 13.40 0.10 to 13.40 0.20 draft data january 13, 1998 june 12, 1998 november 7, 1998 january 15, 1999 march 26, 2001 october 15, 2001 the attached datasheets are provided by samsung electronics. samsung electronics co., ltd. reserve the right to change the spec ifications and products. samsung electronics will answer to your questions about device. if you have any questions, please contact the samsung branch offices.
k6t4008v1c, k6t4008u1c family cmos sram revision 2.01 october 2001 2 512k 8 bit low power and low voltage cmos static ram general description the k6t4008v1c and k6t4008u1c families are fabricated by samsung s advanced cmos process technology. the fami- lies support various operating temperature range and have var- ious package type for user flexibility of system design. the families also support low data retention voltage for battery back-up operation with low data retention current. features process technology: tft organization: 512k 8 power supply voltage k6t4008v1c family: 3.0~3.6v k6t4008u1c family: 2.7~3.3v low data retention voltage: 2v(min) three state outputs package type: 32-sop-525, 32-tsop2-400f/r 32-tsop1-0813.4f pin description name function name function a 0 ~a 18 address inputs vcc power we write enable input vss ground cs chip select input i/o 1 ~i/o 8 data inputs/outputs oe output enable input product family 1. the paramerter is measured with 30pf test load. product family operating temperature vcc range speed power dissipation pkg type standby (i sb1 , max) operating (i cc2 , max) k6t4008v1c-b commercial(0~70 c) 3.0~3.6v 70 1) /85ns 15 m a 30ma 32-sop-525 32-tsop2-400f/r 32-tsop1-0813.4f k6t4008u1c-b 2.7~3.3v 70 1) /85/100ns k6t4008v1c-f industrial(-40~85 c) 3.0~3.6v 70 1) /85ns 20 m a k6t4008u1c-f 2.7~3.3v 70 1) /85/100ns functional block diagram 32-sop (forward) 32-tsop2 a16 a14 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o1 i/o2 i/o3 vss vcc a15 we a13 a8 a9 a11 oe a10 cs i/o8 i/o7 i/o6 i/o5 i/o4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-tsop2 a16 a14 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o1 i/o2 i/o3 vss vcc a15 we a13 a8 a9 a11 oe a10 cs i/o8 i/o7 i/o6 i/o5 i/o4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (reverse) a18 a17 a17 a18 samsung electronics co., ltd. reserves the right to change products and specifications without notice. a15 precharge circuit. memory array 1024 rows 512 8 columns i/o circuit column select clk gen. row select a2 a3 a8 a9 a10 a13 a11 a0 a1 a4 a5 a6 a7 a14 cs we i/o 1 data cont data cont oe i/o 8 a12 a16 a18 a11 a9 a8 a13 we a17 a15 vcc a18 a16 a14 a12 a7 a6 a5 a4 oe a10 cs i/o8 i/o7 i/o6 i/o5 i/o4 vss i/o3 i/o2 i/o1 a0 a1 a2 a3 (forward) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 a17 control logic 32- s tsop1
k6t4008v1c, k6t4008u1c family cmos sram revision 2.01 october 2001 3 product list commercial temp products(0~70 c) industrial temp products(-40~85 c) part name function part name function k6t4008v1c-gb70 k6t4008v1c-gb85 k6t4008v1c-vb70 k6t4008v1c-vb85 k6t4008v1c-mb70 k6t4008v1c-mb85 K6T4008V1C-YB70 k6t4008v1c-yb85 k6t4008u1c-gb70 k6t4008u1c-gb85 k6t4008u1c-gb10 k6t4008u1c-vb70 k6t4008u1c-vb85 k6t4008u1c-vb10 k6t4008u1c-mb70 k6t4008u1c-mb85 k6t4008u1c-mb10 k6t4008u1c-yb70 k6t4008u1c-yb85 k6t4008u1c-yb10 32-sop, 70ns, 3.3v, ll 32-sop, 85ns, 3.3v, ll 32-tsop2-f, 70ns, 3.3v, ll 32-tsop2-f, 85ns, 3.3v, ll 32-tsop2-r, 70ns, 3.3v, ll 32-tsop2-r, 85ns, 3.3v, ll 32-stsop1-f, 70ns, 3.3v, ll 32-stsop1-f, 85ns, 3.3v, ll 32-sop, 70ns, 3.0v, ll 32-sop, 85ns, 3.0v, ll 32-sop, 100ns, 3.0v, ll 32-tsop2-f, 70ns, 3.0v, ll 32-tsop2-f, 85ns, 3.0v, ll 32-tsop2-f, 100ns, 3.0v, ll 32-tsop2-r, 70ns, 3.0v, ll 32-tsop2-r, 85ns, 3.0v, ll 32-tsop2-r, 100ns, 3.0v, ll 32-stsop1-f, 70ns, 3.0v, ll 32-stsop1-f, 85ns, 3.0v, ll 32-stsop1-f, 100ns, 3.0v, ll k6t4008v1c-gf70 k6t4008v1c-gf85 k6t4008v1c-vf70 k6t4008v1c-vf85 k6t4008v1c-mf70 k6t4008v1c-mf85 k6t4008v1c-yf70 k6t4008v1c-yf85 k6t4008u1c-gf70 k6t4008u1c-gf85 k6t4008u1c-gf10 k6t4008u1c-vf70 k6t4008u1c-vf85 k6t4008u1c-vf10 k6t4008u1c-mf70 k6t4008u1c-mf85 k6t4008u1c-mf10 k6t4008u1c-yf70 k6t4008u1c-yf85 k6t4008u1c-yf10 32-sop, 70ns, 3.3v, ll 32-sop, 85ns, 3.3v, ll 32-tsop2-f, 70ns, 3.3v, ll 32-tsop2-f, 85ns, 3.3v, ll 32-tsop2-r, 70ns, 3.3v, ll 32-tsop2-r, 85ns, 3.3v, ll 32-stsop1-f, 70ns, 3.3v, ll 32-stsop1-f, 85ns, 3.3v, ll 32-sop, 70ns, 3.0v, ll 32-sop, 85ns, 3.0v, ll 32-sop, 100ns, 3.0v, ll 32-tsop2-f, 70ns, 3.0v, ll 32-tsop2-f, 85ns, 3.0v, ll 32-tsop2-f, 100ns, 3.0v, ll 32-tsop2-r, 70ns, 3.0v, ll 32-tsop2-r, 85ns, 3.0v, ll 32-tsop2-r, 100ns, 3.0v, ll 32-stsop1-f, 70ns, 3.0v, ll 32-stsop1-f, 85ns, 3.0v, ll 32-stsop1-f, 100ns, 3.0v, ll functional description 1. x means don t care (must be in low or high state) cs oe we i/o mode power h x 1) x 1) high-z deselected standby l h h high-z output disabled active l l h dout read active l x 1) l din write active absolute maximum ratings 1) 1. stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. functional oper ation should be restricted to recommended operating condition. exposure to absolute maximum rating conditions for extended periods may affect r eliability. item symbol ratings unit remark voltage on any pin relative to vss v in , v out -0.5 to v cc +0.5 v - voltage on vcc supply relative to vss v cc -0.3 to 4.6 v - power dissipation p d 1.0 w - storage temperature t stg -65 to 150 c - operating temperature t a 0 to 70 c k6t4008v1c-b, k6t4008u1c-b -40 to 85 c k6t4008v1c-f, k6t4008u1c-f
k6t4008v1c, k6t4008u1c family cmos sram revision 2.01 october 2001 4 recommended dc operating conditions 1) note: 1. commercial product: t a =0 to 70 c, otherwise specified. industrial product: t a =-40 to 85 c, otherwise specified. 2. overshoot: v cc +2.0v in case of pulse width 30ns 3. undershoot: -2.0v in case of pulse width 30ns 4. overshoot and undershoot are sampled, not 100% tested. item symbol product min typ max unit supply voltage vcc k6t4008v1c family k6t4008u1c family 3.0 2.7 3.3 3.0 3.6 3.3 v ground vss all family 0 0 0 v input high voltage v ih k6t4008v1c, k6t4008u1c family 2.2 - vcc+0.3 2) v input low voltage v il k6t4008v1c, k6t4008u1c family -0.3 3) - 0.6 v capacitance 1) (f=1mhz, t a =25 c) 1. capacitance is sampled, not 100% tested. item symbol test condition min max unit input capacitance c in v in =0v - 8 pf input/output capacitance c io v io =0v - 10 pf dc and operating characteristics 1. industrial product = 20 m a item symbol test conditions min typ max unit input leakage current i li v in =vss to vcc -1 - 1 m a output leakage current i lo cs =v ih or oe =v ih or we =v il v io =vss to vcc -1 - 1 m a operating power supply current i cc i io =0ma, cs =v il , v in =v il or v ih , read - - 4 ma average operating current i cc1 cycle time=1 m s, 100% duty, i io =0ma cs 0.2v,v in 0.2v or v in 3 vcc-0.2v - - 4 ma i cc2 cycle time=min, 100% duty, i io =0ma, cs =v il, v in =v ih or v il - - 30 ma output low voltage v ol i ol =2.1ma - - 0.4 v output high voltage v oh i oh =-1.0ma 2.4 - - v standby current(ttl) i sb cs =v ih , other inputs = v il or v ih - - 0.3 ma standby current (cmos) i sb1 cs 3 vcc-0.2v, other inputs=0~vcc - - 15 1) m a
k6t4008v1c, k6t4008u1c family cmos sram revision 2.01 october 2001 5 ac characteristics (k6t4008v1c family: vcc=3.0~3.6v, k6t4008u1c family: vcc=2.7~3.3v commercial product: t a =0 to 70 c, industrial product: t a =-40 to 85 c) parameter list symbol speed bins units 70ns 85ns 100ns min max min max min max read read cycle time t rc 70 - 85 - 100 - ns address access time t aa - 70 - 85 - 100 ns chip select to output t co - 70 - 85 - 100 ns output enable to valid output t oe - 35 - 40 - 50 ns chip select to low-z output t lz 10 - 10 - 10 - ns output enable to low-z output t olz 5 - 5 - 5 - ns chip disable to high-z output t hz 0 25 0 25 0 30 ns output disable to high-z output t ohz 0 25 0 25 0 30 ns output hold from address change t oh 10 - 10 - 15 - ns write write cycle time t wc 70 - 85 - 100 - ns chip select to end of write t cw 60 - 70 - 80 - ns address set-up time t as 0 - 0 - 0 - ns address valid to end of write t aw 60 - 70 - 80 - ns write pulse width t wp 55 - 55 - 70 - ns write recovery time t wr 0 - 0 - 0 - ns write to output high-z t whz 0 25 0 25 0 30 ns data to write time overlap t dw 30 - 35 - 40 - ns data hold from write time t dh 0 - 0 - 0 - ns end write to output low-z t ow 5 - 5 - 5 - ns c l 1) 1. including scope and jig capacitance ac operating conditions test conditions (test load and input/output reference) input pulse level: 0.4 to 2.2v input rising and falling time: 5ns input and output reference voltage: 1.5v output load(see right): c l =100pf+1ttl c l 1) =30pf+1ttl 1. 70ns product data retention characteristics 1. industrial product = 20 m a item symbol test condition min typ max unit vcc for data retention v dr cs 3 vcc-0.2v 2.0 - 3.6 v data retention current i dr vcc=3.0v, cs 3 vcc-0.2v - 0.5 15 1) m a data retention set-up time t sdr see data retention waveform 0 - - m s recovery time t rdr 5 - -
k6t4008v1c, k6t4008u1c family cmos sram revision 2.01 october 2001 6 address data out previous data valid data valid timing diagrams timing waveform of read cycle(1) (address controlled , cs = oe =v il , we =v ih ) t aa t rc t oh timing waveform of read cycle(2) ( we =v ih ) data valid high-z cs address oe data out notes (read cycle) 1. t hz and t ohz are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. at any given temperature and voltage condition, t hz (max.) is less than t lz (min.) both for a given device and from device to device interconnection. t oh t aa t olz t lz t ohz t hz t rc t oe t co1
k6t4008v1c, k6t4008u1c family cmos sram revision 2.01 october 2001 7 timing waveform of write cycle(2) ( cs controlled) address cs t wc t wr(4) t as(3) t dw t dh data valid we data in data out high-z high-z t cw(2) t wp(1) t aw notes (write cycle) 1. a write occurs during the overlap of a low cs and a low we . a write begins at the latest transition among cs going low and we going low : a write end at the earliest transition among cs going high and we going high, t wp is measured from the begining of write to the end of write. 2. t cw is measured from the cs going low to the end of write. 3. t as is measured from the address valid to the beginning of write. 4. t wr is measured from the end of write to the address change. t wr is applied in case a write ends with cs or we going high. data retention wave form cs controlled v cc 3.0/2.7v 1) 2.2v v dr cs gnd data retention mode cs 3 v cc - 0.2v t sdr t rdr timing waveform of write cycle(1) ( we controlled) address cs t cw(2) t wr(4) t wp(1) t dw t dh t ow t whz data undefined data valid we data in data out t wc t aw t as(3) 1. 3.0v for k6t4008v1c family, 2.7v for k6t4008u1c family
k6t4008v1c, k6t4008u1c family cmos sram revision 2.01 october 2001 8 package dimensions units: millimeters(inches) 32 pin plastic small outline package (525mil) 0~8 #32 20.47 0.20 0.806 0.008 max 20.87 0.822 max 2.74 0.20 0.108 0.008 3.00 0.118 min 0.002 0.05 0.004 max 0.10 max #1 0.71 ( ) 0.028 1 3 . 3 4 0 . 5 2 5 11.43 0.20 0.450 0.008 0.80 0.20 0.031 0.008 + 0.10 0.20 - 0.05 + 0.004 0.008 - 0.002 14.12 0.30 0.556 0.012 #17 #16 1.27 0.050 + 0.100 0.41 - 0.050 + 0.004 0.016 - 0.002 32 pin smaller thin small outline package type i (0813.4f) 1.00 0.10 0.039 0.004 max 8.40 0.331 1 . 1 0 m a x 0 . 0 0 4 m a x #1 0.50 ( ) 0.020 11.80 0.10 0.465 0.004 0.45 ~0.75 0.018 ~0.030 13.40 0.20 0.528 0.008 + 0.10 0.15 - 0.05 + 0.004 0.006 - 0.002 0~8 + 0.10 0.20 - 0.05 + 0.004 0.008 - 0.002 0.50 0.0197 0.25 ( ) 0.010 min 0.05 0.002 max 1.20 0.047 8 . 0 0 0 . 3 1 5 typ 0.25 0.010 #16 #32 #17
k6t4008v1c, k6t4008u1c family cmos sram revision 2.01 october 2001 9 32 pin thin small outline package type ii (400f) 0~8 #32 20.95 0.10 0.825 0.004 max 21.35 0.841 max 1.00 0.10 0.039 0.004 1.20 0.047 min 0.002 0.05 0.004 max 0.10 max #1 0.95 ( ) 0.037 1 0 . 1 6 0 . 4 0 0 + 0.10 0.15 - 0.05 + 0.004 0.006 - 0.002 11.76 0.20 0.463 0.008 #17 #16 0.50 ( ) 0.020 0.45~0.75 0.018 ~ 0.030 0.25 ( ) 0.010 1.27 0.050 0.40 0.10 0.016 0.004 package dimensions 32 pin thin small outline package type ii (400r) 0~8 #32 #1 1 0 . 1 6 0 . 4 0 0 + 0.10 0.15 - 0.05 + 0.004 0.006 - 0.002 11.76 0.20 0.463 0.008 #17 #16 0.50 ( ) 0.020 0.45 ~0.75 0.018 ~ 0.030 0.25 ( ) 0.010 20.95 0.10 0.825 0.004 max 21.35 0.841 max 1.00 0.10 0.039 0.004 1.20 0.047 min 0.002 0.05 0.004 max 0.10 max 0.95 ( ) 0.037 1.27 0.050 0.40 0.10 0.016 0.004 units: millimeters(inches)
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